Direction-sensitive poly-electric infrared sensor for use in passive-infrared motion detector, has signal processing unit accommodated in housing, and sensor elements arranged in such manner that elements produce complete annular ring

摘要

The sensor has a poly-electric chip (10) and a low-noise signal processing unit e.g. pre-amplifier, accommodated in a detector housing with three connection pins. The chip sensor elements (1, 2) formed in a chip volume between overlapped surfaces of congruent electrodes. The electrode surfaces have an annulus segmented structure on an upper surface of the chip, where ring segment breadth of the structure is continuously increased and/or decreased in a direction. The sensor elements are arranged in such a manner that the elements combinely produce virtually a complete annular ring.