| 发明名称 |
SEMICONDUCTOR LIGHT EMITTING ELEMENT AND ITS MANUFACTURING METHOD, LIGHT SOURCE CELL UNIT, BACKLIGHT, LIGHTING DEVICE, DISPLAY, ELECTRONIC DEVICE, AND SEMICONDUCTOR ELEMENT AND ITS MANUFACTURING METHOD |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element that can suppress quantum confinement Stark effect in an active layer, improve the output of light emission by increasing a volume of the active layer and be easily manufactured, and to provide its manufacturing method. <P>SOLUTION: A substrate 11 is made of a material having a hexagonal crystal structure, and its main face is r plane or a plane. An n-type nitride-based group III-V compound semiconductor layer 12 is grown by priority thereon in a plane orientation, and an n-type nitride-based group III-V compound semiconductor layer 13 and an active layer 14 are sequentially grown thereon by priority in m plane orientation. Furthermore, a p-type nitride-based group III-V compound semiconductor layer 15 is grown by priority thereon in a plane orientation, so as to form a light emitting diode structure. The active layer 14 has a section shape of saw tooth, and slopes 14a and 14b are m-plane facet. The light emitting diode is used to manufacture a light emitting diode backlight. <P>COPYRIGHT: (C)2008,JPO&INPIT |
