Conductive barrier layer producing method for manufacturing integrated circuit, involves depositing layer on exposed surfaces by self-restricted deposition technique, and providing surface with characteristics at reduced deposition rate

摘要

The method involves selectively modifying surface characteristics of exposed surfaces (208B, 208S) of a component structure unit (208) of a semiconductor unit (200). A material layer is deposited on the surfaces of the component structure unit by a self-restricted deposition technique. The exposed surface (208B) is provided with the modified surface characteristics at a reduced deposition rate, where the material layer comprises tantalum nitride and another material layer comprises tantalum. An independent claim is also included for a method for manufacturing coating material of a component structure unit of a semiconductor unit.