| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging element and its manufacturing method which reduce noise and can acquire superior sensitivity. SOLUTION: Each pixel 1 of a plurality of pixels arranged regularly includes: a photoelectric conversion region 12 and a diffusion region 11 for converting an incident light formed on the surface of a semiconductor substrate 2 into a charge; a transferring means 7 for transferring the charge to the diffusion region 11; an amplifying type element 21 for outputting an optical signal corresponding to the quantity of charge transferred to the diffusion region 11; an output wiring 14 for outputting the optical signal formed in inter-layer insulating films 16, 17 and 18 formed on the semiconductor substrate 2; and metal thin films 17 which are in the inter-layer insulating films 16, 17 and 18 and further thinner than the output wiring 14 formed along the surface of the semiconductor substrate 2. The metal thin film 17 has an opening part on at least the photoelectric conversion region 12, and further covers a part of the diffusion region 11. COPYRIGHT: (C)2008,JPO&INPIT
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