发明名称 |
Method and Structure for Isolating Substrate Noise |
摘要 |
An integrated circuit structure for isolating substrate noise and a method of forming the same are provided. In the preferred embodiment of the present invention, a semi-insulating region is formed using proton bombardment in a substrate between a first circuit region and a second circuit region. Two guard rings are formed along the semi-insulating region, each on a side. A backside semi-insulating region is formed through proton bombardment from the back surface of the substrate into the substrate. The backside semi-insulating region is preferably connected with the semi-insulating region. A grounded guard layer is preferably formed on the backside semi-insulating region.
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申请公布号 |
US2008132028(A1) |
申请公布日期 |
2008.06.05 |
申请号 |
US20080972482 |
申请日期 |
2008.01.10 |
申请人 |
LIEN WAI-YI;TANG DENNY DUAN-LEE |
发明人 |
LIEN WAI-YI;TANG DENNY DUAN-LEE |
分类号 |
H01L21/76 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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