发明名称 Method and Structure for Isolating Substrate Noise
摘要 An integrated circuit structure for isolating substrate noise and a method of forming the same are provided. In the preferred embodiment of the present invention, a semi-insulating region is formed using proton bombardment in a substrate between a first circuit region and a second circuit region. Two guard rings are formed along the semi-insulating region, each on a side. A backside semi-insulating region is formed through proton bombardment from the back surface of the substrate into the substrate. The backside semi-insulating region is preferably connected with the semi-insulating region. A grounded guard layer is preferably formed on the backside semi-insulating region.
申请公布号 US2008132028(A1) 申请公布日期 2008.06.05
申请号 US20080972482 申请日期 2008.01.10
申请人 LIEN WAI-YI;TANG DENNY DUAN-LEE 发明人 LIEN WAI-YI;TANG DENNY DUAN-LEE
分类号 H01L21/76 主分类号 H01L21/76
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