| 摘要 |
A semiconductor device has a semiconductor layer, a plurality of charge-accumulating layers formed at a predetermined interval from each other on said semiconductor layer through a first insulating film, a second insulating film formed on said charge-accumulating layer, a control gate including a silicide film formed on said second insulating film, a third insulating film formed between said control gates so that the top surface of said third insulating film is lower than the top surface of said control gate but is higher than the top surface of said second insulating film, a fourth insulating film formed into a concave shape so as to cover the top surface of said third insulating film and the side surfaces of said control gate positioned higher than the top surface of said third insulating film, and a fifth insulating film formed on said control gate and said fourth insulating film.
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