| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resist material having very high resolution in an ArF lithography technique and providing a pattern with good faithfulness to a pattern and small LER. <P>SOLUTION: The positive resist material contains: a resin component (A) which becomes soluble in an alkali developer under the action of an acid; and a compound (B) which generates an acid in response to an actinic ray or radiation, wherein the resin component (A) is a high molecular compound having a repeating unit represented by a general formula (1) and the compound (B) which generates the acid is a sulfonium salt compound comprising a fluorine-containing sulfonate, wherein R<SP>1</SP>is H or methyl; R<SP>2</SP>is a fluorine-containing substituent; n is 1 or 2; a, b, c and d are each 0.01 and less than 1; and a+b+c+d=1. <P>COPYRIGHT: (C)2008,JPO&INPIT |
