发明名称 THREE TERMINAL CRYSTAL SILICON ELEMENT
摘要 <P>PROBLEM TO BE SOLVED: To provide a crystal silicon light emitting element capable of providing a wanted light emission wavelength at high efficiency, with the wavelength being variable. <P>SOLUTION: A p-type silicon substrate 10 made from single crystal is prepared and a plurality of nano Si posts 15 are formed on one surface of the p-type silicon substrate 10. The nano Si posts 15 form a homojunction together with the silicon substrate 10, representing cylindrical pillar projections. On the surface of the silicon substrate 10, a silicon oxide film 16 in the region except for the upper surface of the nano Si post 15, a third electrode 17 so provided as to cover at least a part of the side surface of the nano Si post 15, and an insulating film 18 covering the surface of the third electrode 17 are formed. Further, a transparent electrode 19 is provided which forms a Schottky barrier wall 30 by contacting at least the upper surface of the nano Si post 15. A metal electrode 20 is formed on the other surface of the silicon substrate 10. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008130712(A) 申请公布日期 2008.06.05
申请号 JP20060312461 申请日期 2006.11.20
申请人 HITACHI MAXELL LTD 发明人 HONMA HIDEO
分类号 H01L33/04;H01L33/24;H01L33/34;H01L33/38;H01L33/42;H01L33/44 主分类号 H01L33/04
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