| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor light emitting element having a tunnel junction in which reliability can be enhanced. <P>SOLUTION: The nitride semiconductor light emitting element includes a substrate, and a first n-type nitride semiconductor layer, a light emitting layer, a p-type nitride semiconductor tunnel junction layer, an n-type nitride semiconductor tunnel junction layer, and a second n-type nitride semiconductor layer formed sequentially on the substrate wherein the p-type nitride semiconductor tunnel junction layer and the n-type nitride semiconductor tunnel junction layer form a tunnel junction, and at least one of the p-type nitride semiconductor tunnel junction layer and the n-type nitride semiconductor tunnel junction layer is a nitride semiconductor light emitting element containing aluminum. <P>COPYRIGHT: (C)2008,JPO&INPIT |
