| 摘要 |
PROBLEM TO BE SOLVED: To provide a device and a method for improving positive hole mobility. SOLUTION: A semiconductor device includes an oxide layer on a first silicon layer and a second silicon layer on the oxide layer, and the oxide layer is formed between the first silicon layer and the second silicon layer. A first silicon layer 210 and a second silicon layer 230 include the same crystal orientations. The device further includes a tapered germanium layer 250 on the first silicon layer, and the tapered germanium layer is in contact with a spacer 240 and the first silicon layer, but not in contact with an oxide layer 220. A lower part of the tapered germanium layer contains a higher concentration of germanium than that of an upper part of the tapered germanium layer, and there exists no germanium at the upper face of the tapered germanium layer. COPYRIGHT: (C)2008,JPO&INPIT
|
