SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device that cannot be damaged easily, and to provide a manufacturing method of the semiconductor device. SOLUTION: The semiconductor device 10 comprises: a first semiconductor region 14; a second semiconductor region 16; a third semiconductor region 32; a fourth semiconductor region 34; a trench gate 36; and an internal insulator region 30. The internal insulator region 30 is arranged between a first low-concentration region 20 and a second low-concentration region 22 in the second semiconductor region 16. The entire internal insulator region 30 is arranged at a position deeper than a bottom surface 37 of the trench gate 36. COPYRIGHT: (C)2008,JPO&INPIT