SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device and a method for manufacturing the semiconductor device capable of improving an yield of a device characteristic and enabling its practical application. SOLUTION: The semiconductor device (FET) has a semiconductor film (an active layer) comprising a diamond single crystal, and the surface 13a of the semiconductor film (the active layer) is inclined from at an angle of not smaller than 2°and not larger than 10°from a ä001} surface to a direction from a [110] direction within a direction at an angle of not smaller than -15°and not larger than 15°at the surface 13a of the semiconductor film (the active layer). The semiconductor film (the active layer) has a channel in the surface vertical to the off-directin of the semiconductor film (the active layer). COPYRIGHT: (C)2008,JPO&INPIT