发明名称 MEMORY CARD SYSTEM INCLUDING NAND FLASH MEMORY AND SRAM/NOR FLASH MEMORY, AND DATA STORAGE METHOD THEREOF
摘要 An integrated circuit memory system includes a random access memory device, a flash memory device and a memory controller, which may be embodied on a single integrated circuit substrate. The memory controller is configured to respond to at least one command to write data into the flash memory device by first writing the data into the random access memory device and then transferring the data from the random access memory device to the flash memory device. The random access memory device may be a NOR-type flash memory device and the flash memory device may be a NAND-type flash memory device.
申请公布号 US2008133824(A1) 申请公布日期 2008.06.05
申请号 US20070696991 申请日期 2007.04.05
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM GWANG-MYUNG
分类号 G06F12/02 主分类号 G06F12/02
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