| 摘要 |
Disclosed is a method for manufacture of a transistor or organic semiconductor device, which can form an active layer that comprises an organic semiconductor compound and is previously provided with a predetermined property, on the intended surface successfully. A method for manufacture of a transistor, the transistor being composed of a source electrode, a drain electrode, an active layer that serves as a current passage between the electrodes and comprises an organic semiconductor compound, a gate electrode for controlling the current passing through the current passage, and an insulation layer provided between the active layer and the gate electrode, the method comprising binding the active layer and the insulation layer together through an application solution. |
