| 摘要 |
<p>An exposure mask and a method for manufacturing a semiconductor device using the same are provided to enhance characteristics of the semiconductor device by increasing resolution of an island pattern and securing a margin of DOF(Depth Of Focus). An exposure mask for forming an island pattern of a peripheral circuit region includes a light shielding pattern(400) and a phase shift region(410). The phase shift region and the light shielding pattern are separated from each other. The light shielding pattern is formed on a transparent substrate(405). The phase shift region is formed by etching a rear surface of the transparent substrate of both sides of the light shielding pattern. The light shielding pattern is formed with a chrome layer. Transmittance of the light shielding pattern is 4 to 80 percent.</p> |
