| 摘要 |
A method for manufacturing a semiconductor device is provided to suppress bad influence on a first and second semiconductor layers by forming a buffer layer before forming a first semiconductor layer. An oxide layer is formed on a semiconductor substrate(1). A window section is formed by removing selectively the oxide layer. A substrate semiconductor layer(1a) is exposed within the window section. A first semiconductor layer(5) is formed to cover the substrate semiconductor layer. A second semiconductor layer(6) is formed to cover the first semiconductor layer. A supporter hole is formed by removing the second semiconductor layer and the first semiconductor layer. A supporter(12) is formed to cover an isolation region and to fill up the supporter hole. An end exposure surface is formed by etching the second semiconductor layer and the first semiconductor layer. The first semiconductor layer is removed. The second semiconductor layer is exposed by removing the supporter. A semiconductor device is formed on the second semiconductor layer.
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