CHARGE TRAP SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THE SAME

摘要

A charge trap semiconductor memory device and a manufacturing method of the same are provided to enhance retention characteristics by adjusting effectively a trap position and density in a charge trap layer. A first precursor material is coated on a substrate surface(31). A first layer(33) including an insulating material is formed by oxidizing the first precursor material. A second precursor material including a metal material is coated on the first layer. The first precursor material is formed instead of the second precursor material on a part of the substrate surface. A second layer(35) is formed by oxidizing the first precursor material including the insulating material and the second precursor material including the metal material. A charge trap layer is formed by isolating the metal material within the insulating material.