| 摘要 |
A semiconductor device and a manufacturing method thereof are provided to apply a high-k gate insulating layer by stabilizing a threshold voltage even if a polysilicon gate electrode has used. A semiconductor device comprises an insulating layer on which a center portion is protruded, a channel region which is formed on a center portion of the protruded insulating layer, a pure silicide(109) which is formed on the insulating layer at both sides of the channel region, a gate insulating layer(105) which is formed on the center portion of the channel region, a gate electrode(106) which is formed on the gate insulating layer, and a spacer(107) which is formed at both sides of the gate electrode.
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