| 摘要 |
A method for fabricating a semiconductor device is provided to prevent defect transition by performing a wet cleaning process, and to prevent defect source generation by removing completely a polysilicon layer which is attached irregularly in a post cleaning process. A polysilicon layer is formed by inserting a gate oxide layer on a silicon wafer(110). A gate region is defined by coating the photoresist on the polysilicon layer and selectively patterning thereon. The photoresist at an edge of the silicon wafer is removed selectively. A gate electrode is formed by removing the polysilicon layer selectively using the patterned photoresist as a mask. A sidewall of an insulating layer is formed at both sides of the gate electrode. A source/drain dopant region is formed on the silicon wafer. A metal silicide layer is formed. An insulating material is removed by performing an HF etching process. The gate electrode formed at the edge portion of the silicon wafer is removed by performing a post cleaning process.
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