| 摘要 |
A plasma process apparatus having a scanning injector and a plasma process method thereof are provided to form a uniform deposition profile on an entire area of a wafer by improving a structure thereof. A wafer(100) is loaded into a process chamber(200). A scanning injector(300) supplies local plasma of a reaction gas to a local region of the wafer in order to scan the local plasma over an entire region of the wafer. The scanning injector includes a pair of barrier ribs, an injection nozzle, and a local plasma generation unit. The barrier ribs are used for forming a slit of a length corresponding to a diameter of the wafer. The injection nozzle is used for injecting the reaction gas into an internal space of the slit. The local plasma generation unit excites the reaction gas in order to produce the plasma.
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