发明名称 |
Hafnium doped cap and free layer for MRAM device |
摘要 |
A high performance MTJ, and a process for manufacturing it, are described. A capping layer of NiFeHf is used to getter oxygen out of the free layer, thereby increasing the sharpness of the free layer-tunneling layer interface. The free layer comprises two NiFe layers whose magnetostriction constants are of opposite sign, thereby largely canceling one another. |
申请公布号 |
EP1918947(A3) |
申请公布日期 |
2008.06.04 |
申请号 |
EP20070392007 |
申请日期 |
2007.09.27 |
申请人 |
MAGIC TECHNOLOGIES INC. |
发明人 |
HORNG, CHENG T.;TONG, RU-YING;TORNG, CHYU-JIUH;KULA, WITOLD |
分类号 |
H01F10/32;H01F41/30 |
主分类号 |
H01F10/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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