发明名称 Alkaline etching solution for semiconductor wafer and alkaline etching method
摘要 <p>Provided are an alkaline etching solution capable of improving a surface roughness even with a relatively low alkaline concentration, which has been conventionally widely used, an alkaline etching method using the solution, a method of manufacturing a silicon wafer, and further a silicon wafer with its surface roughness improved, obtained through the method.</p><p>The alkaline etching solution according to the present invention is an alkaline aqueous solution containing bromate or an alkaline aqueous solution containing bromate and nitrate. </p>
申请公布号 EP1898454(A3) 申请公布日期 2008.06.04
申请号 EP20070016454 申请日期 2007.08.22
申请人 SILTRONIC AG 发明人 SHIGEKI, NISHIMURA
分类号 H01L21/306;C01B11/20 主分类号 H01L21/306
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