发明名称 Method of making a semiconductor device with improved heat dissipation
摘要 A method of making a heat dissipation member comprising the steps of forming a resist on a substrate, removing a portion or portions of said resist formed on the substrate in places where posts are to be formed, forming the posts on the substrate in said places where the resist is removed, forming a joint material on the posts disposed on the substrate and removing the remaining resist on the substrate.
申请公布号 US7381592(B2) 申请公布日期 2008.06.03
申请号 US20070654555 申请日期 2007.01.18
申请人 FUJITSU LIMITED 发明人 YOSHIMURA HIDEAKI
分类号 H01L21/00;H01L23/36;H01L23/34;H01L23/373;H01L23/433 主分类号 H01L21/00
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