发明名称 Method of making three dimensional, 2R memory having a 4F2 cell size RRAM
摘要 A method of fabricating a multi-level 3D memory array includes: preparing a wafer and peripheral circuits thereon; layers of metal, memory resistor material, and metal are deposited, patterned and etched. The steps of the method of the invention are repeated for N levels of a memory array.
申请公布号 US7381616(B2) 申请公布日期 2008.06.03
申请号 US20060510427 申请日期 2006.08.24
申请人 SHARP LABORATORIES OF AMERICA, INC. 发明人 HSU SHENG TENG
分类号 H01L21/336 主分类号 H01L21/336
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