Method for fabricating a semiconductor memory device that includes silicidizing a portion of a platinum group layer to form a silicide region and selectively removing the silicide region to define a bottom electrode of a capacitor

摘要

The semiconductor memory device comprises a glue layer defining a cylinder shell, a bottom electrode made of a material of the platinum group and covering the inner face and the outer face of the cylinder shell, a dielectric layer formed over the bottom electrode, and a top electrode positioned over the dielectric layer. The bottom electrode, the dielectric layer, and the top electrode comprise a cell capacitor.