| 发明名称 |
Thin film transistor with a passivation layer |
| 摘要 |
Apparatus comprising a thin film transistor having passivation layer disposed adjacent to a second surface of said channel layer, wherein said passivation layer comprises one or more wide-bandgap dielectric materials.
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| 申请公布号 |
US7382421(B2) |
申请公布日期 |
2008.06.03 |
| 申请号 |
US20040964062 |
申请日期 |
2004.10.12 |
| 申请人 |
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. |
发明人 |
HOFFMAN RANDY;WAGER JOHN;HONG DAVID;CHIANG HAI |
| 分类号 |
G02F1/1343;G02F1/136 |
主分类号 |
G02F1/1343 |
| 代理机构 |
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