发明名称 |
High-breakdown-voltage insulated gate semiconductor device |
摘要 |
In a semiconductor device of the present invention, the top surface of an n-type silicon carbide layer formed on a silicon carbide substrate is miscut from the (0001) plane in the <11-20> direction. A gate electrode, a source electrode and other elements are arranged such that in a channel region, the dominating current flows along a miscut direction. In the present invention, a gate insulating film is formed and then heat treatment is performed in an atmosphere containing a group-V element. In this way, the interface state density at the interface between the silicon carbide layer and the gate insulating film is reduced. As a result, the electron mobility becomes higher in a miscut direction A than in the direction perpendicular to the miscut direction A.
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申请公布号 |
US7381993(B2) |
申请公布日期 |
2008.06.03 |
申请号 |
US20070730660 |
申请日期 |
2007.04.03 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
UCHIDA MASAO;KITABATAKE MAKOTO;KUSUMOTO OSAMU;YAMASHITA KENYA;TAKAHASHI KUNIMASA;MIYANAGA RYOKO |
分类号 |
H01L31/0312;H01L21/04;H01L29/04;H01L29/06;H01L29/24;H01L29/36;H01L29/423;H01L29/78 |
主分类号 |
H01L31/0312 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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