VERTICAL STRUCTURE LED DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

A vertical structure LED device and a method for manufacturing the same are provided to allow a wafer bonding process at low temperature less than 150 °C by locally heating a junction boundary with a micro bonding and to suppress bending occurrence of a wafer. A method for manufacturing a vertical structure LED device includes: sequentially forming a first conductive type III-V group chemical compound semiconductor layer, an active layer, a second conductive type III-V group chemical compound semiconductor layer on a growth substrate; adhering a conductive substrate(101) on the second conductive type III-V group chemical compound semiconductor layer; removing the growth substrate from the III-V group chemical compound semiconductor layers; and forming an electrode on the first conductive type III-V group chemical compound semiconductor layer of a surface side exposed by removal of the growing substrate.