发明名称 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
摘要 A substrate processing apparatus and a substrate processing method are provided to obtain uniformity between substrates by operating stably a vaporization unit. A process chamber(201) receives a substrate(200). A heating unit(207) heats the substrate. A gas supply system supplies a desired processing gas to the process chamber. An exhaust system exhausts atmosphere in the process chamber. The gas supply system includes a plurality of gas nozzles(233a1,233a2,233a3) for supplying a vaporized gas of a liquid material to different positions of the process chamber at normal temperature and pressure, and a plurality of vaporization units connected to the gas nozzles in order to vaporize the liquid material. A control unit(280) controls the vaporized amount of the vaporization units.
申请公布号 KR20080048974(A) 申请公布日期 2008.06.03
申请号 KR20070122871 申请日期 2007.11.29
申请人 HITACHI KOKUSAI ELECTRIC INC. 发明人 HONDA KOICHI;SATO TAKETOSHI
分类号 H01L21/20;H01L21/02 主分类号 H01L21/20
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