发明名称 |
Semiconductor device configured to control a gate voltage between a threshold voltage and ground |
摘要 |
A pair of upper and lower semiconductor switching elements can switch between the conductive state and the non-conductive state when control voltages vary. A controller controls the levels of the control voltages to alternately turn on the upper and lower semiconductor switching elements. The controller controls the absolute value of the second control voltage of the lower semiconductor switching element so as to reach a mean voltage before and after the time of transition between the conductive state and the non-conductive state of the upper semiconductor switching element. The mean voltage is lower than the absolute value of a threshold voltage and higher than a reference voltage.
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申请公布号 |
US7382116(B2) |
申请公布日期 |
2008.06.03 |
申请号 |
US20050061840 |
申请日期 |
2005.02.22 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
ENDO KOICHI;TAKAHASHI MORIO |
分类号 |
G05F1/00;H03K17/284 |
主分类号 |
G05F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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