Method for the production of an integrated circuit bar arrangement comprising a metal nitride layer and integrated circuit arrangement

摘要

The document explains, inter alia, a method in which a titanium nitride layer is removed by wet chemical means ( 106 ). Following removal of the titanium nitride, further metallization strata are produced ( 114 ). The result is an integrated circuit arrangement having connections which have a low electrical resistance. The circuit arrangement is particularly suitable for the purpose of switching high powers.