METHOD OF FORMING AN ISOLATION STRUCTURE

摘要

A method for forming an isolation structure is provided to suppress the decrease of breakdown voltage by forming a re-oxidation layer for curing an exposed part of the damaged substrate. A trench(106) is formed on a substrate(100). A first oxide layer pattern(135) having a spacer structure is formed on a sidewall of the trench. A curing process is performed to cure an exposed surface of the substrate by using an oxidant while the first oxide layer pattern is formed on the sidewall of the trench. The trench is buried to form a second oxide layer pattern on the first oxide layer pattern and the exposed surface of the substrate. The oxidant includes oxygen, ozone, or nitric oxide. The curing process is performed by a radical oxidation process, a diffusion process, or a rapid thermal oxidation process.