METHOD OF FORMING AN ISOLATION STRUCTURE

摘要

A method for forming an isolation structure is provided to suppress the generation of a void on a sidewall of a trench in an isolation pattern forming process for burying the trench. A first trench is formed on a substrate(100). A preliminary liner is formed on a bottom surface and a sidewall of the first trench. A liner(125) is obtained from the preliminary liner by annealing the resultant having the preliminary liner. A first preliminary oxide layer is formed on a surface of the liner. An overhang is removed and a first oxide layer having a second trench is formed when the first preliminary oxide has the overhang. A second oxide is formed to bury the second trench. A planarization process for the second oxide layer is performed to expose an upper surface of the substrate and to form a second oxide layer pattern.