| 摘要 |
A positive photoresist composition capable of forming a film thickness of 5 mum or greater, preventing cracking due to thermal shock even if exposed to a low temperature atmosphere, having high sensitivity, and easily releasable with general solvents; and a method of forming a photoresist pattern using the positive photoresist composition. The positive photoresist composition contains (A) an alkali soluble novolak resin, (B) at least one plasticizer selected from an alkali soluble acrylic resin and an alkali soluble vinyl resin, and (C) a quinonediazide group-containing compound. The method of forming a photoresist pattern uses the positive photoresist composition.
|
