METHOD OF FORMING GAN LAYER AND GAN SUBSTRATE MANUFACTURED USING THE SAME

摘要

A method of forming a gallium nitride thin film and a gallium nitride thin film substrate manufactured by the same are provided to reduce a stress due to a thermal coefficient difference between gallium nitride and silicon. A method of forming a gallium nitride thin film includes: forming a first aluminum nitride layer(20) on a silicon substrate(10); an epitaxial gallium nitride layer(30) of the first aluminum nitride layer; forming a gallium aluminum nitride layer(40) on the epitaxial gallium nitride layer; forming a second aluminum nitride layer(50) on the gallium aluminum nitride layer; and a gallium nitride thin film on the second aluminum nitride layer. The first aluminum nitride layer is formed to have a thickness ranging from 2 nm to 100 nm. The step of forming a first aluminum nitride layer on a silicon substrate includes: forming Al coating layer on the silicon substrate; and flowing NH3 gas to an upper portion of the Al coating layer to convert the Al coating layer into an aluminum nitride layer.