METHOD OF MANUFACTURING A STACKED SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a stacked semiconductor device is provided to simplify a manufacturing process by performing simultaneously a hardening process and a thermal cleaving process during a thermal process. A hydrogen ion doped region is formed apart from an upper surface of a first substrate by implanting hydrogen ions into the upper surface of the first substrate including single crystal silicon. A plurality of structures are formed on a second substrate including single crystal silicon. A flexible oxide layer(214) is formed on the second substrate in order to bury the structures. The flexible oxide layer of the second substrate is attached to the upper surface of the first substrate. A channel thin film(216) is formed on the flexible oxide layer by processing thermally the attached substrates and separating the first substrate along the hydrogen ion doped region.