A method for manufacturing a semiconductor device is provided to bury fully an aluminum layer by forming uniformly a titanium layer by using a plasma enhanced chemical vapor deposition process. An interlayer dielectric pattern(110) having a via hole for exposing a metal line(106) is formed on a substrate(100) having the metal line. A titanium layer is uniformly formed on an inner surface of the via hole and an upper surface of the interlayer dielectric pattern by performing a plasma enhanced chemical vapor deposition process. An aluminum layer is formed on the titanium layer in order to bury the via hole. The plasma enhanced chemical vapor deposition process is performed at the temperature of 350 to 500°C.
