RESISTIVE RANDOM ACCESS MEMORY AND MANUFACTURING METHOD FOR THE SAME

摘要

A method for manufacturing a resistance random access memory device is provided to remove the variation of resistances of a resistance layer by maintaining constantly a current path of the resistance random access memory device. A resistance random access memory device includes a lower electrode(21), a resistance layer(22) including a metal dopant formed on the lower electrode, and an upper electrode(23) formed on the resistance layer. The metal dopant is composed of a transition metal. The resistance layer is composed of a transition metal compound. The transition metal compound includes one material of a Ni oxide, a Ti oxide, an Hf oxide, a Zr oxide, a Zn oxide, a W oxide, a Co oxide, or an Nb oxide. The resistance layer is composed of the Ni oxide including a Ni dopant.