发明名称 ATMOSPHERIC PRESSURE PLASMA SURFACE TREATMENT APPARATUS AND ATMOSPHERIC PRESSURE PLASMA SURFACE TREATMENT METHOD
摘要 A plasma processing apparatus and a plasma surface processing method are provided to process rapidly a surface of a substrate by optimizing an arrangement of plasma generation units. A plasma generation unit(100) includes a first gas housing(110) for storing temporarily a process gas. A second plasma generation unit(200) includes a second gas housing(210) for storing temporarily the process gas. An edge of a plasma generation part of the second gas housing comes in contact with an edge of a plasma generation part of the first gas housing. The second plasma generation unit is positioned at a place which is symmetrical to the first plasma generation unit. The first and second generation units move to perform a surface process.
申请公布号 KR20080048287(A) 申请公布日期 2008.06.02
申请号 KR20060118485 申请日期 2006.11.28
申请人 ADP ENGINEERING CO., LTD. 发明人 HWANG, IN UK
分类号 H01L21/304;H01L21/3065 主分类号 H01L21/304
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