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发明名称
绝缘薄膜之形成方法
摘要
一种绝缘薄膜之制法包括(1)将含具有笼式结构之化合物的薄膜形成组成物涂布于基板上形成薄膜,然后将薄膜乾燥之程序;及(2)以波长大于200奈米之电子束或电磁波照射薄膜之程序。
申请公布号
TW200823229
申请公布日期
2008.06.01
申请号
TW096136160
申请日期
2007.09.28
申请人
富士软片股份有限公司
发明人
村松诚
分类号
C07F7/00(2006.01);H01L21/31(2006.01)
主分类号
C07F7/00(2006.01)
代理机构
代理人
何金涂;何秋远
主权项
地址
日本
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