| 摘要 |
A semiconductor device and a method for manufacturing the same are provided to prevent damage from being generated in an insulating layer having a low dielectric constant in a metal wire process. A method for manufacturing a semiconductor device includes a step of sequentially forming a first etching stop layer(110), a first insulating layer(120), and a second etching stop layer(130) on a substrate with a predetermined lower structure. A first etching process is performed to expose the first etching stop layer by etching the second etching stop layer and the first insulating layer with a predetermined photoresist pattern using as an etching mask, thereby forming the first insulating layer pattern. A second insulating layer(140) is formed to fill the gap between a plurality of first insulating layer patterns. A via(150) is formed by performing a second etching process etching the first insulating layer patterns. |
