METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to decrease a size of a device and to improve the reliability of a wire by not using a barrier layer. A method for manufacturing a semiconductor device includes a step of forming an interlayer insulation film(3) having a contact hole on a substrate. A seed layer having a first metal material and an additive is formed on the interlayer insulation film. The seed layer is annealed through a thermal annealing process to form an interface layer(11) between the seed layer and the interlayer insulation film. A second metal material is deposited on the seed layer to form a metal wire(13). The contact hole is a via hole. The contact hole includes the via hole and a trench penetrated with the via hole. The first metal material and the second metal material are made of Cu.