CMOS IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME

摘要

A CMOS image sensor and a manufacturing method of the same are provided to reduce flicker noise by forming an asymmetric junction region in a source region of a drive transistor. A CMOS image sensor includes a light sensing element and a drive transistor(168). The drive transistor includes a drive gate(167) formed on a semiconductor substrate(105), a channel region defined within the semiconductor substrate under the drive gate, a first conductive type source region and drain regions(194,196) formed at both sides of the channel region, and a second conductive type asymmetric junction region defined in a lower part of the source region. The first conductive type is one of an N type and a P type. The second conductive type is the other one of the N type and P type.