| 摘要 |
<p>An MOSFET device and a manufacturing method thereof are provided to simplify a manufacturing process by forming a silicon layer for forming a shallow junction region as a single SEG(Selective Epitaxial Growth) process. A silicon substrate(200) is divided into an active area and a device isolation area. The active area comprises a gate forming area, a bit line contact forming area and a storage node contact forming area. A device isolation layer is formed within the device isolation area. An insulation pattern(201) is formed on the bit line contact area and the storage node contact area. A silicon epitaxial layer(220) is formed on the active area of the silicon substrate including the insulation pattern. A gate(250) is formed on the silicon substrate including the silicon epitaxial layer. A junction area(260) is formed in the silicon epitaxial layer which is the bit line contact forming area and the storage node contact forming area of both sides of the gate.</p> |
