| 摘要 |
<p>A method of determining a mask pattern for manufacturing a semiconductor device is provided to reduce complexity of a pattern through optical proximity correction without passing through complex simulation. A method of determining a mask pattern for manufacturing a semiconductor device comprises the following steps of: firstly expanding the line width of a connection part of first wiring patterns which are adjacent to each other and will be connected to adjacent contact regions to determine a first extension pattern(30); secondly expanding line width of the connection part to determine a second extension pattern having a first overlap region which overlaps with the connection part; expanding the first overlap region to define a second overlay region(42); defining a removal region, the overlap region between the second overlay region and the first extension pattern; and determining the final wiring pattern except for the removal region from the first extension pattern.</p> |
