METHOD OF FORMING FIELD EFFECT TRANSISTOR

摘要

A method of forming a field effect transistor is provided to increase the size of a source/drain region of the transistor by using spacers with reduced lateral wall dimension, and reduce the influence of a shot channel effect by forming differently the size of the source/drain region. A gate electrode(16) having electric insulation spacers(20) is formed on a lateral wall. Impurities which are selected from a group consisting of germanium and florin to improve etching are implanted into electric insulation spacers. The electric insulation spacers are subjected to etch back to reduce lateral wall dimensions of the electric insulation spacers. By using the electric insulation spacers with the reduced lateral wall dimensions as an ion implantation mask, source/drain dopants of first conductive type are implanted into a semiconductor substrate(10).