| 摘要 |
<p>A semiconductor memory device, a semiconductor device, a display device, a liquid crystal display and an image receiving apparatus are provided to simplify the structure of an element by using a gate insulating layer, which functions as a memory storage unit, is made of a silicon oxide layer. Two diffusion layer regions(112,113) are formed in a semiconductor layer(117), and has a source region and a drain region. A channel region is defined between the two diffusion layer regions. A gate insulating layer(121) is formed on the channel region, and has a silicon oxide layer containing carbon atoms of 0.1 to 5.0 atomic percent. A gate electrode(131) is formed on the gate insulating layer. The diffusion layer regions are P-type conductive regions and a current flowing between the two diffusion layer regions is reduced by accumulating holes in the gate insulating layer.</p> |
