| 摘要 |
A semiconductor device having an MIM capacitor and a manufacturing method of the same are provided to simplify a manufacturing process by using only one additional mask. A first dielectric layer(110) and a first interlayer dielectric(120) are deposited on a top layer(100) after a top layer wiring process is performed. The first dielectric layer and the first interlayer dielectric are removed by patterning a region connected directly to the top layer. The first interlayer dielectric is etched by patterning an upper electrode region of the capacitor. A pad and a top electrode of capacitor are formed by stacking and patterning a metal layer. A second dielectric layer(140), a second interlayer dielectric(150), and a third dielectric layer(160) are stacked and patterned.
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