VERTICAL NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

A vertical-structure nitride semiconductor light emitting device and a manufacturing method thereof are provided to improve an optical characteristic by absorbing the stress resulted from a difference of thermal expansion coefficient between a light emitting structure and a substrate. A light emitting structure has a first conductive nitride layer(21), a second conductive nitride layer, and an active layer(22) formed between the first and second conductive nitride layers. An electrode portion(30a) is formed on an exposed surface of the first conductive nitride layer, and a high-reflective ohmic contact layer(24) is formed on an exposed surface of the second conductive nitride layer. A stress absorbing layer(27) is formed on the ohmic contact layer, and has an insulation pattern structure formed on the stress absorbing layer to electrically connect the ohmic contact layer.