| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-withstand voltage semiconductor device which can suppress a variation in a voltage Vt caused by a plasma damage in a VIA hole forming step, and a method of manufacturing the semiconductor device. SOLUTION: The high-withstand voltage semiconductor device includes a gate electrode 17 of a transistor having a gate insulating film 16 of a thickness not smaller than 350Åformed on a semiconductor substrate, and a diode having a well region 15 of a first conduction type formed in a surface layer area of the semiconductor substrate and a diffusion layer 20 of a second conduction type formed on the well region 15 in the surface layer area of the semiconductor substrate. The gate electrode and the diode are electrically connected via the contacts 21, by means of a wiring line 22B directly connected to contacts 21 formed on the gate electrode and on the diode. COPYRIGHT: (C)2008,JPO&INPIT |
